1. Holo graphic data storage
This technology gives high data storing capacity than magnetic and optical storage. These method stores data in same place with different angles of light. These can be read using same LASER with same angles of light. It has a data access time of about 200 milli seconds.
2. 3D optical data storage
This is a data storage technology in which we can read and write data in 3D resolution. Eventhough LASER is used, disc layers are more than common discs.
3. TRAM
Thyristor RAM combines the high speed and volume of SRAM and DRAM. This utilises the electrical property called negative differential resistance. This thin capacitively coupled Thyristor can be used to manufacture memories of high density.
4. ZRAM
It is the short form of zero capacitor RAM. It is DRAM memory developed by Innovative silicon. Floating body effect of silicon on insulator is the base for this. This has the speed of 6 transistor SDRAM used in cache memories. AMD will use this technology in their future microprocessors.
5. TTRAM
This is a memory technique similar to DRAM which is based on the concept of one transistor and one capacitor. It is the short form of twin transistor RAM. Here silicon on insulator is used instead of capacitor. Of the two transistors one acts as access transistor and other acts as storage transistor.
6. FeRAM
It is also known as Ferro electric RAM. This method user Ferro electric layer instead of dielectric layer. It is a non volatile DRAM. It has high speed and high write/erase cycles.
7. PMC
It is also called programable metallisation cell and is developed by combined effort of Arizona state university and Axon technologies. Long lifetime, memory density and low power consumption are the specialities of this technology.
8. SONOS
It is a non volatile memory similar to flash memory. It is the short form of silicon oxide nitride oxide silicon. In this technology silican nitried is used instead of polysilicon for storing charge.
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